TC2996B Datasheet, PDF (1/3 Pages) Transcom, Inc. – 1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

TC2996B
REV1_20070503
1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
• 12 W Typical Power at 1.9 GHz
• 13 dB Typical Linear Power Gain at 1.9 GHz
• High Linearity: IP3 = 50 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Lg = 1 µm, Wg = 30 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS (@ 1.9 GHz)
SYMBOL
CONDITIONS
MIN
P_1dB Output Power at 1dB Gain Compression Point V_DS = 10 V, I_DS = 2.5A
39.5
G_L Linear Power Gain V_DS = 10 V, I_DS = 2.5A
12
IP3 Intercept Point of the 3^rd-order Intermodulation, V_DS = 10 V, I_DS = 2.5A, *P_SCL = 28 dBm
PAE Power Added Efficiency at 1dB Compression Power
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 60 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =15 mA
20
R_th Thermal Resistance
* P_SCL: Output Power of Single Carrier Level.
TYP
41.0
13
50
40
7.5
5400
-1.7
22
1.5
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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