TC2896 Datasheet, PDF (2/4 Pages) Transcom, Inc. – 5 W Flange Ceramic Packaged GaAs Power FETs

TC2896
REV4_20070507
ABSOLUTE MAXIMUM RATINGS at 25 °C
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
33 dBm
P_T
Continuous Dissipation
12 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
V_DS
Drain to Source Voltage
I_D
Drain Current
8V
1200 mA
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
FLANGE PACKAGE OUTLINE (Unit: mm)
Gate
Source
Drain
Source
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (V_D = 8 V, I_D = 1200 mA)
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
S11
MAG
ANG
0.9650
171.78
0.9638
163.17
0.9619
154.95
0.9589
146.44
0.9546
137.21
0.9486
126.89
0.9404
114.98
0.9295
100.88
S21
MAG
ANG
0.9104
59.16
0.6050
42.70
0.4575
27.39
0.3761
12.78
0.3298
-1.60
0.3056
-16.23
0.2972
-31.69
0.3011
-48.62
S12
MAG
ANG
0.0139
-12.97
0.0142
-21.11
0.0149
-28.69
0.0159
-36.22
0.0173
-44.15
0.0195
-52.92
0.0224
-63.02
0.0263
-75.03
S22
MAG
ANG
0.8234
170.89
0.8368
165.05
0.8493
158.49
0.8590
151.12
0.8648
142.84
0.8664
133.42
0.8636
122.53
0.8562
109.67
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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