TC2896 Datasheet, PDF (1/4 Pages) Transcom, Inc. – 5 W Flange Ceramic Packaged GaAs Power FETs

5 W Flange Ceramic Packaged GaAs Power FETs
TC2896
REV4_20070507
FEATURES
• 5 W Typical Power at 6 GHz
• 8 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 47 dBm Typical at 6 Ghz
• High Power Added Efficiency:
Nominal PAE of 40 % at 6 GHz
• Suitable for High Reliability Application
• Lg = 0.6 µm, Wg = 12 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC and RF Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for
commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS
Symbol
CONDITIONS
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point, f = 6 GHz V_DS = 8 V, I_DS = 1200 mA
36 36.5
dBm
G_L Linear Power Gain, f = 6 GHz V_DS = 8 V, I_DS = 1200 mA
8
dB
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS = 8 V, I_DS = 1200 mA, *P_SCL = 23 dBm
47
dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
40
%
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 24 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =6 mA
R_th Thermal Resistance
3
2000
-1.7**
18 22
2.7
A
mS
Volts
Volts
°C/W
* P_SCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2896 into 3 model numbers to fit customer design requirement
(1)TC2896P1519 : Vp = -1.5V to -1.9V (2)TC2896P1620 : Vp = -1.6V to -2.0V (3)TC2896P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan,
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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