TC2876 Datasheet, PDF (2/2 Pages) Transcom, Inc. – 5 W Low-Cost Packaged PHEMT GaAs Power FETs

TC2876
REV4_20070507
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)
Symbol
Parameter
Rating
V_DS
Drain-Source Voltage
12 V
V_GS
Gate-Source Voltage
-5 V
I_DS
Drain Current
I_DSS
P_in
RF Input Power, CW
33 dBm
P_T
Continuous Dissipation
12 W
T_CH
Channel Temperature
175 °C
T_STG
Storage Temperature
- 65 °C to +175 °C
RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
V_DS
Drain to Source Voltage
I_D
Drain Current
8V
1200 mA
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
OUTLINE DIMENSIONS (Unit: inch)
2 PLCS
2 PLCS
4 PLCS
4 PLCS
4 PLCS
4 SIDES
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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