TC2876 Datasheet, PDF (1/2 Pages) Transcom, Inc. – 5 W Low-Cost Packaged PHEMT GaAs Power FETs

5 W Low-Cost Packaged PHEMT GaAs Power FETs
TC2876
REV4_20070507
FEATURES
• 5 W Typical Output Power at 6 GHz
• 7 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 47 dBm Typical at 6 GHz
• High Power Added Efficiency:
Nominal PAE of 40 % at 6 GHz
• Suitable for High Reliability Application
• Breakdown Voltage: BV_DGO ≥ 18 V
• Lg = 0.6 µm, Wg = 12 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Low Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2876 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs
Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All
devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power
amplifiers for commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
CONDITIONS
MIN TYP MAX UNIT
P_1dB Output Power at 1dB Gain Compression Point , f = 6 GHz V_DS = 8 V, I_DS = 1200 mA
36 36.5
dBm
G_L Linear Power Gain, f = 6 GHz V_DS = 8 V, I_DS = 1200 mA
7
dB
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz V_DS = 8 V, I_DS = 1200 mA, *P_SCL = 23 dBm
47
dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
40
%
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 24 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =6 mA
R_th Thermal Resistance
3
2000
-1.7**
18 22
3.5
A
mS
Volts
Volts
°C/W
Note: * P_SCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2876 into 3 model numbers to fit customer design requirement
(1)TC2876P1519 : Vp = -1.5V to -1.9V (2)TC2876P1620 : Vp = -1.6V to -2.0V (3)TC2876P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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