TC2676 Datasheet, PDF (2/3 Pages) Transcom, Inc. – 2 W Low-Cost Packaged PHEMT GaAs Power FETs

TC2676
REV4_20070906
ABSOLUTE MAXIMUM RATINGS (T_A=25 ° C) RECOMMANDED OPERATING CONDITION
Symbol
V_DS
V_GS
I_DS
P_in
P_T
T _CH
T _STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
I_DSS
30 dBm
7.7 W
175 °C
- 65 °C to +175 °C
Symbol
Parameter
Rating
V_DS
Drain to Source Voltage
I_D
Drain Current
HANDLING PRECAUTIONS:
8V
500 mA
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
TYPICAL SCATTERING PARAMETERS (T_A=25 ° C)
V_DS = 8 V, I_DS = 500 mA
-0.2
-0.4
S11
Swp Max
9GHz
3.0
4.0
5.0
10.0
Swp Min
2GHz
Mag Max
0.4
135
150
165
-180
-165
-150
-135
0.1
Per Div
S12
Swp Max
9 GHz
45
30
15
0
-15
-30
-45
Swp Min
2 GHz
Mag Max
4
135
150
165
-180
-165
-150
-135
1
Per Div
S21
Swp Max
9 GHz
45
30
15
0
-15
-30
-45
Swp Min
2 GHz
-0.2
-0.4
S22
Swp Max
9GHz
3.0
4.0
5.0
10.0
Swp Min
2GHz
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
S11
MAG
ANG
0.8583 159.78
0.8419 137.46
0.8171 114.30
0.7833 87.34
0.7492
0.7445
53.95
12.53
0.8082 -34.29
0.9125 -79.43
S21
MAG
ANG
3.3298
47.16
2.3730
20.35
1.9527
-6.75
1.7538
-35.79
1.6530
1.5564
-68.43
-106.23
1.3586 -149.76
1.0009 164.08
S12
MAG
ANG
0.0396
28.75
0.0580
20.43
0.0832
6.31
0.1169 -13.20
0.1597
0.2058
-38.78
-71.41
0.2347 -111.25
0.2175 -154.91
S22
MAG
ANG
0.4800 163.15
0.4735 149.56
0.4560 134.61
0.4254 116.87
0.3866
0.3603
93.67
58.23
0.4064
3.35
0.5776 -56.08
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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