TC2676 Datasheet, PDF (1/3 Pages) Transcom, Inc. – 2 W Low-Cost Packaged PHEMT GaAs Power FETs

TC2676
REV4_20070906
2 W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
l 2 W Typical Output Power at 6 GHz
l 9 dB Typical Linear Power Gain at 6 GHz
l High Linearity: IP3 = 43 dBm Typical at 6 GHz
l High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
l Suitable for High Reliability Application
l Breakdown Voltage: BV_DGO ≥ 18 V
l Lg = 0.6 µm, Wg = 5 mm
l Tight Vp ranges control
l High RF input power handling capability
l 100 % DC Tested
l Low Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2676 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100%
DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for
commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (T_A=25 ° C)
Symbol
Conditions
P_1dB
G_L
IP3
PAE
Output Power at 1dB Gain Compression Point, f = 6 GHz V_DS = 8 V, I_DS = 500 mA
Linear Power Gain, f = 6 GHz V_DS = 8 V, I_DS = 500 mA
Intercept Point of the 3^rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 500 mA, *PSCL = 20 dBm
Power Added Efficiency at 1dB Compression Power, f = 6 GHz
I_DSS Saturated Drain -Source Current at V_DS = 2 V, V_GS = 0 V
g _m Transconductance at V_DS = 2 V, V_GS = 0 V
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 10 mA
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =2.5 mA
R_th Thermal Resistance
MIN TYP MAX UNIT
32.5 33
dBm
9
dB
43
dBm
43
%
1.25
A
850
mS
-1.7**
18 22
8
Volts
Volts
°C/W
* P _SCL: Output Power of Single Carrier Level
** For the tight control of the pinch-off voltage range, we divide TC2676 into 3 model numbers to fit customer design requirement
(1)TC2676P1519 : Vp = -1.5V to -1.9V (2)TC2676P1620 : Vp = -1.6V to -2.0V (3)TC2676P1721 : Vp = -1.7V to -2.1V If
required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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