TC2571 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – 1W Low-Cost Packaged PHEMT GaAs Power FETs

ABSOLUTE MAXIMUM RATINGS (T_A=25 ° C)
Symbol
Parameter
Rating
V_DS
VGS
I_DS
Pin
P_T
TCH
T _STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
12 V
-5 V
I_DSS
28 dBm
3.8 W
175 °C
- 65 °C to +175 °C
TC2571
REV4_20070906
RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
V_DS
Drain to Source Voltage
ID
Drain Current
HANDLING PRECAUTIONS :
8V
240 mA
The user must operate in a clean, dry environment.
Electrostatic Discharge(ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must less than 300V.
TYPICAL SCATTERING PARAMETERS (TA=25 )
Power Bias : V_DS = 8 V, I_DS = 240 mA
Swp Max
9GHz
3
.0
4.0
5.
0
10.0
-0.2
-0.4
Mag Max
8
135
150
165
-180
-165
-150
-135
2
Per Div
S11
S21
Swp Min
2GHz
Swp Max
9 GHz
45
30
15
0
-15
-30
-45
Swp Min
2 GHz
Mag Max
0.2
135
150
165
-180
-165
-150
-135
0.05
Per Div
-0.2
-0.4
S12
S22
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
S11
MAG
ANG
0.8422
0.8330
179.88
156.09
0.8128
135.66
0.7880
0.7645
114.61
90.83
0.7467
63.85
0.7247
0.7245
33.82
-5.98
S21
MAG
ANG
4.4104
3.0979
55.63
27.48
2.4617
1.60
2.1283
1.9470
-23.92
-50.89
1.8797
-79.40
1.8428
1.7925
-109.44
-146.06
S12
MAG
ANG
0.0378
0.0410
4.41
-5.11
0.0463
-13.48
0.0531
0.0655
-21.93
-35.02
0.0813
-51.82
0.1016
0.1226
-73.69
-103.34
Swp Max
9 GHz
45
30
15
0
-15
-30
-45
Swp Min
2 GHz
Swp Max
9GHz
3.40.0
5.
0
10.0
Swp Min
2GHz
S22
MAG
ANG
0.2968
0.3334
-160.56
-174.58
0.3617
172.88
0.3796
0.3879
159.66
145.45
0.3770
128.62
0.3550
0.3032
110.31
81.57
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www. transcominc.com.tw
Phone: [phone]
Fax: [phone]
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