TC2571 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – 1W Low-Cost Packaged PHEMT GaAs Power FETs

1 W Low-Cost Packaged PHEMT GaAs Power FETs
TC2571
REV4_20070906
FEATURES
• 1W Typical Output Power at 6 GHz
• 11dB Typical Power Gain at 6 GHz
• High Linearity: IP3 = 40 dBm Typical at 6 GHz
• High Power Added Efficiency:
PAE ≥ 43 % for Class A Operation
• Suitable for High Reliability Application
• Breakdown Voltage: BV_DGO ≥ 15 V
• Lg = 0.35 µm, Wg = 2.4 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Low Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2571 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT)
GaAs Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET.
All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range
power amplifiers for commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (T_A=25 )
Symbol
CONDITIONS
MIN TYP MAX UNIT
P1dB Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS= 240 mA
29.5 30
G_1dB Power Gain at 1dB Gain Compression , f = 6GHz V_DS= 8 V, I_DS = 240 mA
11
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6GHz V_DS = 8 V, I_DS= 240 mA, *P_SCL = 17 dBm
40
PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz
43
dBm
dB
dBm
dB
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
600
mA
400
mS
VP Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA
-1.7**
Volts
BV_DGO Drain-Gate Breakdown Voltage at I _DGO =1.2 mA
R_th Thermal Resistance
15 18
20
Volts
°C/W
* P_SCL : Output Power of Single Carrier Level
** For the tight control of the pinch-off voltage range, we divide TC2571 into 3 model numbers to fit customer design requirement
(1)TC2571P1519 : Vp = -1.5V to -1.9V (2)TC2571P1620 : Vp = -1.6V to -2.0V (3)TC2571P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www. transcominc.com.tw
Phone: [phone]
Fax: [phone]
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