TC2471 Datasheet, PDF (2/3 Pages) Transcom, Inc. – 0.5 W Low-Cost Packaged PHEMT GaAs Power FETs

TC2471
REV4_20070906
ABSOLUTE MAXIMUM RATINGS (TA=25 ° C)
S ymbol
Parameter
Rating
V_DS
V_GS
I_DS
P_in
P_T
T_CH
T _STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
12 V
-5 V
I_DSS
26 dBm
1.9 W
175 °C
- 65 °C to +175 °C
RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
V_DS
Drain to Source Voltage
I_D
Drain Current
HANDLING PRECAUTIONS:
8V
120 mA
The user must operate in a clean, dry environment. Electrostatic
Discharge (ESD) precautions should be observed at all stages of
storage, handling, assembly, and testing. The static discharge
must be less than 300V.
TYPICAL SCATTERING PARAMETERS (TA=25 ° C)
V_DS = 8 V, I_DS = 120 mA
Swp Max
9GHz
Mag Max
0.15
3.40.50.0
10.0
135
150
165
S12
-180
-0.2
-0.4
S11
Swp Min
2GHz
-165
-150
-135
0.0375
Per Div
Swp Max
9 GHz
45
30
15
0
-15
-30
-45
Swp Min
2 GHz
Mag Max
8
135
150
165
-180
-165
-150
-135
2
Per Div
S21
Swp Max
9 GHz
45
30
15
0
-15
-30
-45
Swp Min
2 GHz
-0.2
-0.4
S22
Swp Max
9GHz
3.0
4
.0
5.0
10.0
Swp Min
2GHz
FREQUENCY
(GHz)
2
3
4
5
6
7
8
9
S11
MAG
ANG
0.8199 -145.81
0.7843 -179.36
0.7452
0.6992
152.75
123.46
0.6519
0.6272
88.70
46.67
0.6475
-1.92
0.7296
-52.48
S21
MAG
ANG
5.7658
68.93
4.2624
36.13
3.4804
3.0675
7.01
-21.51
2.8445
2.7416
-51.64
-84.42
2.6175 -120.45
2.3753 -161.03
S12
MAG
ANG
0.0387
4.89
0.0399
-13.26
0.0403
0.0415
-26.19
-38.13
0.0462
0.0538
-48.77
-63.69
0.0652
-86.78
0.0752 -117.25
S22
MAG
ANG
0.4708
-84.58
0.4977 -109.23
0.5295
0.5523
-128.52
-145.68
0.5654
0.5626
-161.74
-177.61
0.5367
164.94
0.4441
144.53
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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