TC2471 Datasheet, PDF (1/3 Pages) Transcom, Inc. – 0.5 W Low-Cost Packaged PHEMT GaAs Power FETs

TC2471
REV4_20070906
0.5 W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
• 0.5 W Typical Output Power at 6 GHz
• 14 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 37 dBm Typical at 6 GHz
• High Power Added Efficiency:
Nominal PAE of 40 % at 6 GHz
• Suitable for High Reliability Application
• Breakdown Voltage: BV_DGO ≥ 15 V
• Lg = 0.35 µm, Wg = 1.2 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Low Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2471 is packaged with the TC1401 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The
Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100% DC
tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for
commercial and military high performance power applications .
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
CONDITIONS
MIN TYP MAX UNIT
P1dB Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS= 120 mA
26.5 27
G_L Linear Power Gain, f = 6GHz V_DS = 8 V, I_DS = 120 mA
12 14
IP3 Intercept Point of the 3^rd-order Intermodulation, f = 6GHz V_DS = 8 V, I_DS= 120 mA, *P_SCL=14dBm
37
PAE Power Added Efficiency at 1dB Compression Power, f = 6GHz
40
dBm
dB
dBm
%
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
g _m Transconductance at V_DS = 2 V, V_GS = 0 V
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 2.4 mA
BV_DGO Drain-Gate Breakdown Voltage at I _DGO =0.6 mA
Rth Thermal Resistance
300
200
-1.7**
15 18
30
mA
mS
Volts
Volts
°C/W
Note: * P_SCL: Output Power of Single Carrier Level
** For the tight control of the pinch-off voltage range, we divide TC2471 into 3 model numbers to fit customer design requirement
(1)TC2471P1519 : Vp = -1.5V to -1.9V (2)TC2471P1620 : Vp = -1. 6V to -2.0V (3)TC2471P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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