TC1201V Datasheet, PDF (2/2 Pages) Transcom, Inc. – Low Noise and Medium Power GaAs FETs

TC1201V
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C) TYPICAL NOISE PARAMETERS (T_A=25 °C)
Symbol
Parameter
V_DS Drain-Source Voltage
V_GS Gate-Source Voltage
I_DS Drain Current
I_GS Gate Current
P_in RF Input Power, CW
P_T Continuous Dissipation
T_CH Channel Temperature
T_STG Storage Temperature
Rating
7.0 V
-3.0 V
I_DSS
300 µA
21 dBm
400 mW
175 °C
- 65 °C to +175 °C
V_DS = 4 V, I_DS = 25 mA
Frequency NF_opt
(GHz) (dB)
G_A
(dB)
2
0.36 20.2
4
0.38 18.5
6
0.40 16.7
8
0.43 15.2
10
0.50 13.8
12
0.56 12.7
14
0.66 12.1
16
0.83 12.0
Γ_opt
MAG ANG
0.96
14
0.83
31
0.67
51
0.51
76
0.37
108
0.28
147
0.25 -166
0.31 -108
Rn/50
0.59
0.50
0.39
0.28
0.17
0.13
0.11
0.15
18
1.03 12.2
0.49
-41 0.34
CHIP DIMENSIONS
430 ! 12
D
D
S
G
S
G
S
250! 12
Units: Micrometers
Chip Thickness: 55
Gate Pad: 55 x 50
Drain Pad: 55 x 50
Source Pad: 55 x 65
CHIP HANDLING
DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290°C ±5°C ; Handling Tool :
Tweezers ; Time : less than 1min .
WIRE BONDING : The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. State Temperature : 220°C to 250°C ; Bond Tip Temperature : 150°C ; Bond Force :
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must less than 300V.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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