TC1201V Datasheet, PDF (1/2 Pages) Transcom, Inc. – Low Noise and Medium Power GaAs FETs

TC1201V
REV5_20070502
Low Noise and Medium Power GaAs FETs
FEATURES
! Via holes for source grounding
! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
! High Associated Gain: Ga = 13 dB Typical at 12 GHz
! High Dynamic Range: 1 dB Compression Power P_-1 = 21.5 dBm at 6 V,
40 mA and 12 GHz
! Breakdown Voltage: BV_DGO ≥ 9 V
! Lg = 0.25 µm, Wg = 300 µm
! All-Gold Metallization for High Reliability
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1201V is the same as TC1201 expect via holes in the source reducing the grounding inductance. The
device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and suitable
for low noise and medium power amplifier application including a wide range of commercial and military
application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN
TYP
MAX UNIT
NF Noise Figure at V_DS = 4 V, I_DS = 25 mA, f = 12GHz
0.5
0.7
dB
G_a Associated Gain at V_DS = 4 V, I_DS = 25 mA, f = 12GHz
11
13
dB
P_1dB Output Power at 1dB Gain Compression Point, f = 12GHz V_DS = 6 V, I_DS = 40 mA
20.5
21.5
dBm
G_L Linear Power Gain, f = 12GHz V_DS = 6 V, I_DS = 40 mA
11
12
dB
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
90
mA
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
100
mS
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 0.6 mA
-1.0*
Volts
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =0.15 mA
9
12
Volts
R_th Thermal Resistance
96
°C/W
Note: * For the tight control of the pinch-off voltage . TC1201V’s are divided into 3 groups:
(1)TC1201VP0710 : Vp = -0.7V to -1.0V (2)TC1201VP0811 : Vp = -0.8V to -1.1V
(3)TC1201VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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