TC1102 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Super Low Noise GaAs FETs

TC1102
REV5_20070502
Super Low Noise GaAs FETs
FEATURES
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
PHOTO ENLARGEMENT
High Associated Gain: Ga = 13 dB Typical at 12 GHz
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
DESCRIPTION
The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has
very low noise figure and high associated gain. The device can be used in circuits up to 30 GHz and
suitable for low noise application including a wide range of commercial and military applications. All
devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T_A=25 °C)
Symbol
Conditions
MIN
TYP
MAX UNIT
NF Noise Figure at V_DS = 2 V, I_DS = 10 mA_,, f = 12GHz
0.5
0.7
dB
G_a Associated Gain at V_DS = 2 V, I_DS = 10 mA, f = 12GHz
11
13
dB
I_DSS Saturated Drain-Source Current at V_DS = 2 V, V_GS = 0 V
48
mA
g_m Transconductance at V_DS = 2 V, V_GS = 0 V
55
mS
V_P Pinch-off Voltage at V_DS = 2 V, I_D = 0.32 mA
-1.0*
Volts
BV_DGO Drain-Gate Breakdown Voltage at I_DGO =0.08 mA
5
8
Volts
R_th Thermal Resistance
225
Note: * For the tight control of the pinch-off voltage . TC1102’s are divided into 3 groups:
°C/W
(1) TC1102P0710 : Vp = -0.7V to -1.0V (2) TC1102P0811 : Vp = -0.8V to -1.1V (3) TC1102P0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
ABSOLUTE MAXIMUM RATINGS (T_A=25 °C) TYPICAL NOISE PARAMETERS (T_A=25 °C)
V_DS = 2 V, I_DS = 10 mA
Symbol
V_DS
V_GS
I_DS
I_GS
P_in
P_T
T_CH
T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
5V
-3.0 V
I_DSS
160 µA
17 dBm
250 mW
175 °C
- 65 °C to +175 °C
Frequency
(GHz)
2
4
6
8
10
12
14
16
NF_opt
(dB)
0.30
0.32
0.34
0.37
0.42
0.47
0.56
0.70
G_A
(dB)
19.0
17.4
15.7
14.3
12.9
11.9
11.4
11.2
Γ_opt
MAG ANG
0.98 15
0.84 30
0.68 50
0.51 76
0.38 107
0.28 146
0.25 193
0.32 250
Rn/50
0.40
0.35
0.26
0.19
0.12
0.08
0.07
0.11
18
0.87 10.9 0.49 317 0.23
TRANSCOM, INC., 90 Dasoong 7^th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: [phone]
Fax: [phone]
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