TC55VBM416AFTN55 Datasheet, PDF(8/14 Page) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM

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TC55VBM416AFTN55 Datasheet, PDF (8/14 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM

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READ CYCLE (See Note 1)

Address

A0~A19 (Word Mode)

A-1~A19 (Byte Mode)

CE1

CE2

UB , LB

DOUT

I/O1~16 (Word Mode)

I/O1~8 (Byte Mode)

Hi-Z

TC55VBM416AFTN55

tRC

tACC

tOH

tCO1

tCO2

tOE

tOD

tBA

tODO

tBE

tOEE

tCOE

tBD

VALID DATA OUT

Hi-Z

WRITE CYCLE 1 (R/W CONTROLLED) (See Note 4)

Address

A0~A19 (Word Mode)

A-1~A19 (Byte Mode)

R/W

CE1

CE2

UB , LB

DOUT

I/O1~16 (Word Mode)

I/O1~8 (Byte Mode)

DIN

I/O1~16 (Word Mode)

I/O1~8 (Byte Mode)

tAS

(See Note 2)

(See Note 5)

tWC

tWP

tWR

tCW

tBW

tODW

tOEW

Hi-Z

tDS

tDH

VALID DATA IN

(See Note 3)

(See Note 5)

2002-08-29 8/14

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