TC55VBM416AFTN55 Datasheet, PDF(2/14 Page) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM

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TC55VBM416AFTN55 Datasheet, PDF (2/14 Pages) Toshiba Semiconductor – 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM

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BLOCK DIAGRAM

TC55VBM416AFTN55

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

I/O9

I/O10

I/O11

I/O12

I/O13

I/O14

I/O15

I/O16

A10

A11

A12

A13

A14

A15

A16

A18

A19

MEMORY CELL ARRAY

4,096 Ã 256 Ã 16

(16,777,216)

VDD

GND

SENSE AMP

CLOCK

GENERATOR

COLUMN ADDRESS

DECODER

COLUMN ADDRESS

BUFFER

A-1 A2 A4 A6 A17

A1 A3 A5 A7

CE1

CE2

R/W

BYTE

2002-08-29 2/14

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