TPS819 Datasheet, PDF (7/10 Pages) Toshiba Semiconductor – TOSHIBA Photo IC Silicon Epitaxial Planar

P – Ta
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
Ambient temperature Ta (°C)
TPS819
I_LEAK – Ta
10
Please refer to Figure 2
1
(typ.)
0.1
0.01
0.001
20
VCC = 3 V
VCC = 5 V
40
60
80
100
Ambient temperature Ta (°C)
10000
I_L – E_V
Ta = 25°C
Please refer to Figure 1
1000
(typ.)
100
10
A light source VCC = 3 V
Fluorescent light VCC = 3 V
A light source VCC = 5 V
Fluorescent light VCC = 5 V
1
1
10
100
1000
10000 100000
Illuminance E_V (lx)
1.4
VCC = 3 V
I_L – Ta
Using the A light source
Please refer to Figure 1
1.2
(typ.)
1.0
0.8
0.6
-40
E = 10 lx (A light source)
E = 100 lx (Fluorescent light)
E = 100 lx (A light source)
-20
0
20
40
60
80 100
Ambient temperature Ta (°C)
I_L – V_CC
1.6
Ta = 25°C
Please refer to Figure 1
1.2
(typ.)
0.8
0.4
0
2
3
4
5
6
7
Supply voltage VCC (V)
Vo – E_V
10
VCC = 3 V
Ta = 25°C
Please refer to Figure 4
1
(typ.)
0.1
0.01
0.001
1
Fluorescent light 7.5 kW
Fluorescent light 1 kW
A light source 7.5 kW
A light source 1 kW
10
100
1000
10000 100000
Illuminance E_V (lx)
7
2002-02-28