TPS819 Datasheet, PDF (2/10 Pages) Toshiba Semiconductor – TOSHIBA Photo IC Silicon Epitaxial Planar

Recommended Operating Conditions
TPS819
Characteristics
Supply voltage
Lead resistance
Symbol
V_CC
R_L
Min Typ. Max Unit
2.2
¾
5.5
V
510 ¾
¾
W
Electrical and Optical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Supply current
Light current (1)
Light current (2)
Light current (3)
Light current ratio
Dark current
Saturation output voltage
Peak sensitivity wavelength
Switching time
I_CC
V_CC = 3 V, E_V = 1000 lx,
R_L = 1 kW
(Note 2)
¾
2
¾
mA
I_L (1)
V_CC = 3 V, E_V = 10 lx
(Note 2, 5)
¾
20
¾
I_L (2)
V_CC = 3 V, E_V = 100 lx
(Note 2, 5)
¾
200
¾
mA
I_L (3)
I_L ^(IR)
I_L ⁽³⁾
V_CC = 3 V, l_p = 522 nm,
E_V = 100 lx
(Note 3, 5)
50
¾
(Note 4, 5)
¾ 100
0.03 0.10
I_LEAK
V_CC = 3.3 V, E_V = 0
¾
¾
0.5
mA
Vo
V_CC = 3 V, R_L = 75 kW,
E_V = 100 lx
(Note 3)
2.2
2.35
¾
V
l_p
¾
¾
550
¾
nm
t_r
¾
0.2
¾
t_f
t_d
V_CC = 3 V, R_L = 5 kW,
¾
l_p = 522 nm
(Note 6) _¾
1
0.3
¾
¾
ms
t_s
¾ 0.02 ¾
Note 2: CIE standard A light source is used (color temperature = 2856K)
Note 3: Green LED (l_p = 522 nm) is used as light source and set an illuminance meter for 100 lx.
Light current classification: A Rank: 50~83.5 mA, B Rank: 60~100 mA
Note 4: Infrared LED (l_p = 870 nm) is used as light source for I_L (IR) and light current is set to obtain V_CC = 3 V and
E = 0.01 mW/cm².
Note 5: Light current measurement circuit
I_F
LED
V_CC
I_L
TPS819
OUT
A
Note 6: Rise time/fall time measurement method
Pulse drive
V_CC
l_p = 522 nm
LED
TPS819
OUT
R_L
I_F
t_d
t_s
1.5 V
V_OUT
GND
t_r
t_f
2
90%
10%
2002-02-28