TB7101AF Datasheet, PDF (7/22 Pages) Toshiba Semiconductor – Buck DC-DC Converter IC

TB7101AF(T5L1.2,F)/(T5L1.5,F)/(T5L1.8,F)/(T5L2.5,F)/(T5L3.3,F)
Electrical Characteristics (unless otherwise specified: T_j = 25°C and V_IN = 2.8 to 5.5 V)
TB7101AF (T5L1.8, F)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Operating input voltage
Operating current
Standby current
EN threshold voltage
EN input current
VFB input voltage
High-side switch on-state resistance
Low-side switch on-state resistance
High-side switch leakage current
Low-side switch leakage current
Oscillation frequency
Soft-start time
Thermal
shutdown (TSD)
Undervoltage
lockout (UVLO)
LX current limit
Detection
temperature
Hysteresis
Detection votage
Recovery voltage
Hysteresis
V_{IN (OPR)}
⎯
I_IN1
V_IN = 5 V, V_EN = 5 V, V_FB = 5 V
I_IN2
V_IN = 2.8 V, V_EN = 2.8 V, V_FB = 2.8 V
I_{IN (STBY)} V_IN = 5 V, V_EN = 0 V, V_FB = 0 V
V_{IH (EN) 1} V_IN = 5 V
V_{IH (EN) 2} V_IN = 2.8 V
V_{IL (EN) 1} V_IN = 5 V
V_{IL (EN) 2} V_IN = 2.8 V
I_{IH (EN) 1} V_IN = 5 V, V_EN = 5 V
I_{IH (EN) 2} V_IN = 2.8 V, V_EN = 2.8 V
V_FB1
V_IN = 5 V, V_EN = 5 V, I_OUT = 10 mA
V_FB2
V_IN = 2.8 V, V_EN = 2.8 V, I_OUT = 10 mA
R_{DS (ON) (H)} V_IN = 5 V, V_EN = 5 V, I_LX = −0.5 A
R_{DS (ON) (L)} V_IN = 5 V, V_EN = 5 V, I_LX = 0.5 A
I_{LEAK (H)} V_IN = 5 V, V_EN = 0 V, V_LX = 0 V
I_{LEAK (L)} V_IN = 5 V, V_EN = 0 V, V_LX = 5 V
f_osc1
V_IN = 5 V, V_EN = 5 V
f_osc2
V_IN = 2.8 V, V_EN = 2.8 V
t_ss1
V_IN = 5 V, V_EN = 5 V, I_OUT = 0 A
t_ss2
V_IN = 2.8 V, V_EN = 2.8 V, I_OUT = 0 A
2.8
⎯
⎯
⎯
1.5
1.5
⎯
⎯
7.6
4.26
1.746
1.746
⎯
⎯
⎯
⎯
0.85
0.85
1
1.4
T_SD
V_IN = 5 V
⎯
ΔT_SD
V_IN = 5 V
⎯
V_UV
V_IN = V_EN
2.2
V_UVR
V_IN = V_EN
2.3
ΔV_UV
V_IN = V_EN
⎯
I_LIM
V_IN = 5 V
1.3
⎯
0.68
0.58
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.8
1.8
0.27
0.27
⎯
⎯
1
1
2
2.4
160
20
2.4
2.5
0.1
2.8
5.5
0.9
0.69
1
⎯
⎯
0.5
0.5
12.4
6.94
1.854
1.854
⎯
⎯
−1
1
1.15
1.15
⎯
⎯
⎯
⎯
2.6
2.7
⎯
⎯
V
mA
mA
μA
V
V
V
V
μA
μA
V
V
Ω
Ω
μA
μA
MHz
MHz
ms
ms
°C
°C
V
V
V
A
Note on Electrical Characteristics
The test condition T_j = 25°C means a state where any drifts in electrical characteristics incurred by an increase in
the chip’s junction temperature can be ignored during pulse testing.
7
2008-05-22