TC58NYG0S3EBAI4 Datasheet, PDF (64/65 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Revision History
Date
2009-07-01
2009-07-09
Rev.
1.00
1.10
2009-07-15 1.20
2009-07-16 1.30
2010-01-25 1.40
2010-05-21 1.50
2010-06-22 1.60
2010-07-13 1.70
2011-03-01 1.80
TC58NYG0S3EBAI4
Description
Original version based on TC58NVG0S3EBAJ5_E090629C.pdf
Changed part number and description of “RESTRICTIONS ON PRODUCT USE”.
Modified “FEATURES”.
Revised “APPLICATION NOTES AND COMMENTS ” (14).
Specified weight.
Corrected Device code.
tRST is changed.
Corrected output load.
Corrected typo.
Deleted an invalid description at Page 30.
Deleted Confidential notation.
Changed “RESTRICTIONS ON PRODUCT USE”.
Corrected TIMING DIAGRAM of ID Read.
Changed package drawing.
Deleted TENTATIVE notation.

tR is changed.
64
2011-03-01C