TPC8405 Datasheet, PDF (6/11 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)

P-ch
R_{DS (ON)} – Ta
50
Common source ID = −1.3 A, −2.2 A, −4.5 A
Pulse test
40
30 VGS = −4.5 V
20
VGS = −10 V
10
ID = −1.3 A, −2.2 A, −4.5 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPC8405
−100
−10
−1
I_DR – V_DS
−10 −5 −3
Common source
Ta = 25°C
Pulse test
−1
VGS = 0 V
−0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain−source voltage V_DS (V)
10000
C – V_DS
Ciss
1000
Coss
Crss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
−0.1
−1
−10
Drain−source voltage V_DS (V)
−100
2.0
1.6 ₍₁₎
1.2 ₍₂₎
0.8 ⁽³⁾
(4)
0.4
P_D – Ta
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
0
0
50
100
150
200
Ambient temperature Ta (°C)
V_th – Ta
−2.0
Common source
VDS = −10 V
−1.6
ID = −1 mA
Pulse test
−1.2
−0.8
−0.4
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
−40
−16
Common source
ID = −4.5 A
Ta = 25°C
−30
Pulse test
−12
VDS
−12
−20
−8
−6
VDD = −24 V
−10
−4
VGS
0
0
0
10
20
30
40
50
Total gate charge Q_g (nC)
6
2009-09-29