TPC8405 Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type
(P Channel U−MOS IV/N Channel U-MOS III)
TPC8405
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications
TPC8405
Unit: mm
z Low drain-source ON resistance : P Channel R_{DS (ON)} = 25 mΩ (typ.)
N Channel R_{DS (ON)} = 20 mΩ (typ.)
z High forward transfer admittance : P Channel |Y_fs| = 12S (typ.)
N Channel |Y_fs| = 14S (typ.)
z Low leakage current : P Channel I_DSS = −10 μA (V_DS = −30 V)
N Channel I_DSS = 10 μA (V_DS = 30 V)
z Enhancement-mode
: P Channel V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
N Channel V_th = 1.3 to 2.5 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Rating
Symbol _{P Channel N Channel} Unit
Drain-source voltage
V_DSS
−30
30
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
−30
30
V
Gate-source voltage
V_GSS
±20
±20
V
DC
Drain current
Pulse
(Note 1) I_D
−4.5
6
A
(Note 1) I_DP
−18
24
Drain power
dissipation
Single-device operation
(Note 3a)
P_{D (1)}
1.5
(t = 10s)
(Note 2a)
Single-device value at
dual operation (Note 3b)
P_{D (2)}
1.1
Drain power
dissipation
Single-device operation
(Note 3a)
P_{D (1)}
0.75
(t = 10s)
Single-device value at
(Note 2b) _{dual operation (Note 3b)}
P_{D (2)}
0.45
1.5
1.1
W
0.75
0.45
Single pulse avalanche energy
E_AS
13.2
23.4
(Note 4a) (Note 4b)
mJ
Avalanche current
I_AR
−4.5
6
A
Repetitive avalanche energy
Single-device value at operation
E_AR
0.1
mJ
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29