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SSM6H19NU Datasheet, PDF (6/11 Pages) Toshiba Semiconductor – Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier
7. Characteristics Curves (Note)
7.1. Characteristics Curves of the MOSFET
SSM6H19NU
Fig. 7.1.1 ID - VDS
Fig. 7.1.2 ID - VGS
Fig. 7.1.3 RDS(ON) - VGS
Fig. 7.1.4 RDS(ON) - VGS
Fig. 7.1.5 RDS(ON) - ID
Fig. 7.1.6 RDS(ON) - Ta
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2014-03-12
Rev.2.0