SSM6H19NU Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier

Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier
SSM6H19NU
1. Applications
• DC-DC Converters
2. Features
(1) N-channel MOSFET and a schottky barrier diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance
: R_DS(ON) = 160 mΩ (typ.) (@V_GS = 3.6 V)
(2) 1.8-V gate drive voltage.
2.2. Diode Features
(1) Low forward voltage: V_F = 0.51 V (typ.) (@I_F = 500 mA)
3. Packaging and Internal Circuit
SSM6H19NU
1.Anode
2.NC
3.Drain
4.Source
5.Gate
6.Cathode
UDFN6
4. Absolute Maximum Ratings (Note)
4.1. Absolute Maximum Ratings of the MOSFET
(Unless otherwise specified, T_a = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Drain current (pulsed)
(Note 1)
Channel temperature
Note 1: Ensure that the channel temperature does not exceed 150 .
V_DSS
V_GSS
I_D
I_DP
T_ch
40
V
±12
2.0
A
4.0
150

Start of commercial production
2013-12
1
2014-03-12
Rev.2.0