TPD7211F Datasheet, PDF (5/13 Pages) Toshiba Semiconductor – Power MOSFET Gate Driver for half-bridge

TPD7211F
Electrical Characteristics
(Unless otherwise specified, T_j = − 40 to 125 °C, V_DD = 5 to 18 V, V_STBY = 5 V)
Characteristics
Symbol
Pin
Condition
Min
Typ.
Operating supply voltage
V_DD(opr)
V_DD
-
5
12
Supply current
I_DD1
I_DD2
V_DD
V_STBY=0V, V_DD=12V,
Output pin is open.
-
-
V_DD
V_STBY=5V, V_DD=12V, V_IN1,2=0V,
Output pin is open.
-
-
High level input voltage
Low level input voltage
High level input current
Low level input current
High-side(OUT1)
high-level output voltage
V_IH1
V_IH2
V_IL1
V_IL2
I_IH1
I_IH2
I_IL1
I_IL2
V_O1H
IN1,IN2
STBY
-
IN1,IN2
STBY
IN1,IN2 V_IN1,2=5V, per one input.
STBY V_STBY=5V
IN1,IN2 V_IN1,2=0V, per one input.
STBY V_STBY=0V
OUT1 V_IN1=0V, I_o=-10mA
3.5
-
3.5
-
-
-
-
-
-
20
-
15
-0.2
-
-0.2
-
V_DD
-0.2
-
High-side(OUT1)
low-level output voltage
V_O1L
OUT1 V_IN1=5V, I_o=+10mA
-
-
Low-side(OUT2)
high-level output voltage
V_O2H
OUT2 V_IN2=5V, I_o=-10mA
V_DD
-0.2
-
Low-side(OUT2)
low-level output voltage
V_O2L
OUT2 V_IN2=0V, I_o=+10mA
-
-
Output ON Resistance
R_{DS(ON)[SOURCE]}
OUT1,
OUT2
T_j=25℃, I_o=-250mA
R_DS(ON)[SINK]
OUT1,
OUT2
T_j=25℃, I_o=+250mA
-
4
-
3
Switching times
Dead times
t_d(on)1
t_ON1
t_d(off)1
t_OFF1
t_d(on)2
t_ON2
t_d(off)2
t_OFF2
t_dead1
t_dead2
OUT1
V_DD=12V,
R_o=25Ω, C_o=5000pF
OUT2
OUT1,
OUT2
t_d(off)1-t_d(on)2, t_d(off)2-t_d(on)1
OUT1,
OUT2
t_d(off)1-t_d(on)1, t_d(off)2-t_d(on)2
-
0.25
-
0.5
-
0.25
-
0.5
-
0.25
-
0.5
-
0.25
-
0.5
-
-
-
-
*Please set the deadtime of the input signal after considering the switching time of external power MOSFET.
*The condition of the typical value is T_j=25°C, V_DD=12V.
Max Unit
18
V
10
μA
3
mA
-
V
-
V
1.5
V
0.8
V
50
μA
50
μA
+0.2 μA
+0.2 μA
-
V
0.2
V
-
V
0.2
V
8
Ω
6
1
2
1
2
μs
1
2
1
2
1
μs
1
5
2011-10-24