TPD7211F Datasheet, PDF (1/13 Pages) Toshiba Semiconductor – Power MOSFET Gate Driver for half-bridge

TPD7211F
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD7211F
Power MOSFET Gate Driver for half-bridge
TPD7211F is a Power MOSFET gate driver for half-bridge circuit. BiCD
process is applied on this product.
Features
z Power MOSFET gate driver for half-bridge
z High-side can operate P channel MOSFET, Low-side can operate
N channel MOSFET
z Housed in the PS-8 package and supplied in embossed carrier tape.
Pin Assignment (top view)
IN1 1
STBY 2
IN2 3
8 OUT1
7 V_DD
6 N.C
Marking
SON8-P-0303-0.65
Weight: 0.017g (typ.)
Part No.
(or abbreviation code)
7211F
Lot No.
GND 4
（TOP VIEW）
5 OUT2
・● on the lower left of the marking indicates Pin 1
*Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
Please contact your TOSHIBA sales representative for details
as to environmental matters such as the RoHS compatibility of
Product.
The RoHS is the Directive 2002/95/EC of the European
Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain
This product has a MOS structure and is sensitive electrostatic discharge.
1
2011-10-24