TPCS8212 Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type (U-MOSIII)

R_{DS (ON)} – Ta
60
Common source
Pulse test
50
40
VGS = 2 V
30
20
VGS = 2.5 V
VGS = 4 V
10
ID = 1.5, 3, 6 A
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCS8212
10
10
5
3
5
I_DR – V_DS
1
0
VGS = −1 V
3
Common source
Ta = 25°C
Pulse test
1
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain-source voltage V_DS (V)
10000
Capacitance – V_DS
Ciss
1000
Coss
100
Common source
Ta = 25°C
VGS = 0 V
10 ^{f = 1 MHz}
0.1
1
Crss
10
100
Drain-source voltage V_DS (V)
V_th – Ta
1.6
Common source
VDS = 10 V
ID = 200 µA
Pulse test
1.2
0.8
0.4
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
1.2
(1)
1
0.8 (2)
(3)
0.6
P_D – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0.4 ₍₄₎
0.2
0
0
50
100
150
200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
20
10
Common source
16 VDS
ID = 6 A
Ta = 25°C
Pulse test
8
12
VDD = 16 V
6
VGS
8
4
4
2
0
0
0
8
16
24
32
Total gate charge Q_g (nC)
5
2002-01-17