TPCS8212 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type (U-MOSIII)

TPCS8212
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8212
Lithium Ion Battery Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
• Common drain
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
20
V
20
V
±12
V
6
A
24
JEDEC
―
1.1
JEITA
―
0.75
W
0.6
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
0.35
8765
46.8
mJ
Avalanche current
I_AR
Repetitive avalanche energy
Single-device value at dual operation
E_AR
(Note 2a, 3b, 5)
6
A
0.075
mJ
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
1234
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-01-17