TPCP8H01 Datasheet, PDF (5/8 Pages) Toshiba Semiconductor – TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

TPCP8H01
r_{th (j-c)} – t_w
1000
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
0.1
1
10
100
1000
Pulse width t_w (s)
Safe operating area
10
IC max (Pulsed) * 10 ms* 1 ms* 100 μs*
10 μs*
100 ms*
10 s*
1
DC operation
(Ta = 25°C)
IC max (Continuous)
*: Single nonrepetitive pulse
Ta = 25°C
0.1
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board
(glass epoxy, 1.6 mm thick, Cu
area: 645 mm²).
These characteristic curves
must be derated linearly with
increase in temperature.
0.01
0.1
1
10
100
Collector−emitter voltage V_CE (V)
5
2006-11-13