TPCP8H01 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

TPCP8H01
TOSHIBA Multi-Chip Transistor
Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
TPCP8H01
HIGH-SPEED SWITCHING APPLICATIONS
LORD SWITCHING APPLICATIONS
STROBE FLASH APPLICATIONS
0.33±0.05
0.05 M A
8
5
・Multi-chip discrete device; built-in NPN transistor for main switch and
N-ch MOS FET for drive
・High DC current gain: h_FE = 250 to 400 (I_C = 0.5 A) (NPN transistor)
・Low collector-emitter saturation voltage: V_{CE (sat)} = 0.13 V (max)
(NPN transistor)
・High-speed switching: t_f = 25 ns (typ.) (NPN transistor)
Absolute Maximum Ratings (Ta = 25°C)
Transistor
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEX
80
V
V_CEO
50
Emitter-base voltage
V_EBO
6
V
DC (Note 1)
I_C
Collector current
Pulse (Note 1)
I_CP
5.0
A
7.0
Base current
I_B
0.5
A
Collector power dissipation (NPN)
P_C (Note 2)
1.0
W
Junction temperature
T_j
150
°C
MOS FET
0.475
1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1132
1.12^+-00..1132
1. SOURCE
2. COLLECTOR
3. COLLECTOR
4. COLLECTOR
0.28
+0.1
-0.11
5. BASE
6. EMITTER
7. GATE
8. DRAIN
JEDEC
-
JEITA
-
TOSHIBA 2-3V1E
Weight : 0.017g (Typ.)
Circuit Configuration
8765
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Channel Temperature
DC
Pulse
V_DSS
V_GSS
I_D
I_DP
T_ch
20
V
±10
V
100
mA
200
150
°C
1 2 34
Note 1: Ensure that the junction (channel) temperature does not exceed 150℃.
Note 2: Device mounted on a glass-epoxy board (FR-4, 25.4×25.4×1.6 mm, Cu area: 645 mm²)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-13