TPCP8005-H Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – High-Effciency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications

R_{DS (ON)} – Ta
25
Common source
Pulse test
20
ID = 11A
2.8A,5.5A
15
VGS = 4.5 V
10
ID = 2.8A,5.5A,11A
VGS = 10 V
5
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCP8005-H
I_DR – V_DS
100
10
4.5
3
10
1
Common source
Ta = 25°C
Pulse test
VGS = 0 V
1
0
−0.2
−0.4
−0.6
−0.8
−1
Drain-source voltage V_DS (V)
10000
Capacitance – V_DS
Ciss
1000
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
10
100
Drain-source voltage V_DS (V)
V_th – Ta
3
2.5
2
1.5
1
Common source
0.5
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
(1)
1.6
1.2
(2)
0.8
P_D – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t = 10s
0.4
0
0
40
80
120
160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
20
Common source
ID = 11 A
40 ^{Ta = 25°C}
16
Pulse test
30
VDS
20
12
VDD = 6 V
12 V
24 V
8
10
4
0
0
0
5
10
15
20
25
30
Total gate charge Q_g (nC)
5
2007-12-25