TPCP8005-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High-Effciency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications

TPCP8005-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCP8005-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: Q_SW = 5.0 nC (typ.)
• Low drain-source ON-resistance: R_{DS (ON)} = 9.8 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 30 S (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 30V)
• Enhancement mode: V_th = 1.5 to 2.5 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
11
A
44
1.68
W
0.84
W
78.7
mJ
11
A
0.137
mJ
150
°C
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
0.475 1
4
0.65
2.9±0.1
S
0.025 S
0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12^+-00..1132
1.12^+-00..1132
1. Source 5. Drain
2. Source 6. Drain
3. Source 7. Drain
4. Gate 8. Drain
0.28
+0.1
-0.11
JEDEC
―
JEITA
―
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Circuit Configuration
8765
1234
Marking (Note 5)
8765
8005H
※
1234
Lot No.
2007-12-25