TPCF8A01 Datasheet, PDF (5/9 Pages) Toshiba Semiconductor – Notebook PC Applications Portable Equipment Applications

R_{DS (ON)} – Ta
120
Common source
Pulse Test
100
VGS = 2.0 V
ID = 1.5A,0.75A
80
ID = 3A
60
VGS = 2.5 V
40
ID = 3A,1.5A,0.75A
ID = 3A,1.5A,0.75A
20
VGS = 4.5 V
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
TPCF8A01
10
10
5
I_DR – V_DS
2.0
3
2.5
VGS = 0 V
1
0.5
0.3
Common source
Ta = 25°C
Pulse Test
0.1
0
−0.4
−0.8
−1.2
Drain-source voltage VDS (V)
Capacitance – V_DS
1000
Ciss
100
Coss
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1
1
Crss
3 5 10
30 50 100
Drain-source voltage VDS (V)
V_th – Ta
1.2
1
0.8
0.6
0.4 _{Common source}
VDS = -10 V
0.2 _{ID = -200μA}
Pulse Test
0
−80
−40
0
40
80
120
160
Ambient temperature Ta (°C)
2
t=5s
1.6
(1)
1.2 (2)
P_D – Ta
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
ｔ＝5S
0.8
(3)
0.4 (4)
0
0
40
80
120
160
Ambient temperature Ta (°C)
5
Dynamic input / output
characteristics
20
16
VDS
12
6
4
8
VDD = 16 V ₄
VGS
8
Common source
2
4
ID = -3 A
Ta = 25°C
PULSE TEST
0
0
0
2
4
6
8
10
Total gate charge Qg (nC)
2007-01-16