TPCF8A01 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Notebook PC Applications Portable Equipment Applications

TPCF8A01
TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode
TPCF8A01
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
• Low forward voltage: VFM(2) = 0.46V(typ.)
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
SBD (Ta = 25°C)
Characteristics
V_DSS
V_DGR
V_GSS
I_D
I_DP
E_AS
I_AR
E_AR
Symbol
20
V
20
V
±12
V
3
A
12
1.46
mJ
1.5
A
0.11
mJ
Rating
Unit
JEDEC
―
JEITA
―
TOSHIBA
2-3U1C
Weight: 0.011 g (typ.)
Circuit Configuration
Repetitive peak reverse voltage
Average forward current (Note 2a, 6)
Peak one cycle surge forward current
(non-repetitive)
V_RRM
20
V
I_F(AV)
1.0
A
I_FSM
7(50Hz)
A
8
7
6
5
Absolute Maximum Ratings for MOSFET and SBD (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain power
Single-device operation
(Note 3a)
P_{D (1)}
1.35
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
P_{D (2)}
1.12
W
Drain power
Single-device operation
(Note 3a)
P_{D (1)}
0.53
dissipation
(t = 5 s) (Note 2b) ^{Single-device value at}
dual operation (Note 3b)
P_{D (2)}
0.33
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
-55~150
°C
1
2
3
4
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) and (Note 7): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2007-01-16