TPC8206 Datasheet, PDF (5/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

120
Common source
Pulse test
100
80
R_{DS (ON)} – Ta
ID = 5 A
2.5
1.3
ID = 5 A
60
VGS = 4 V
40
2.5
1.3
20
10
0
-80
-40
0
40
80
120
160
Ambient temperature Ta (°C)
TPC8206
I_DR – V_DS
100
10
10
3
5
1
VGS = 0, -1 V
1
Common source
Ta = 25°C
Pulse test
0.1
0
-0.4
-0.8
-1.2
-1.6
Drain-source voltage V_DS (V)
Capacitance – V_DS
5000
3000
1000
Ciss
500
300
Coss
100
50 _{Common source}
30 VGS = 0 V
Tc = 25°C
f = 1 MHz
10
0.1
1
Crss
10
100
Drain-source voltage V_DS (V)
V_th – Ta
5
Common source
VDS = 10 V
4
ID = 1 mA
Pulse test
3
2
1
0
-80
-40
0
40
80
120
160
Ambient temperature Ta (°C)
2.0
1.6 ₍₁₎
1.2
(2)
0.8 ⁽³⁾
(4)
0.4
P_D – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation
(Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0
0
50
100
150
200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
50
VDD = 48 V
40
25
Common source
ID = 5 A
Ta = 25°C
20
Pulse test
30
24
VDS
20
12
10
12
24
15
VDD = 48 V
VGS
10
5
0
0
0
5
10
15
20
25
30
Total gate charge Q_g (nC)
5
2003-02-18