TPC8206 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

TPC8206
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8206
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
· Small footprint due to small and thin package
· Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 7.0 S (typ.)
· Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
· Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
(t = 10 s)
(Note 2a)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_{D (1)}
P_{D (2)}
P_{D (1)}
P_{D (2)}
E_AS
I_AR
E_AR
T_ch
T_stg
60
V
60
V
±20
V
5
A
20
1.5
W
1.0
0.75
W
0.45
92
mJ
5
A
0.1
mJ
150
°C
-55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-02-18