TCD2950D Datasheet, PDF (5/13 Pages) Toshiba Semiconductor – Image SensorCCD (charge coupled device)

Operating Condition
Characteristics
Symbol
Min
Typ.
Max
“H” level
4.5
5.0
5.5
Clock pulse voltage
“L” level
V_BA
0
¾
0.3
“H” level
4.5
5.0
5.5
Shift pulse voltage
V_SH
“L” level
0
¾
0.5
“H” level
4.5
5.0
5.5
Reset pulse voltage
“L” level
V_RS
0
¾
0.5
“H” level
4.5
5.0
5.5
Clamp pulse voltage
“L” level
VCP
0
¾
0.5
Power supply voltage
V_OD
11.4
12.0
13.0
Clock Characteristics (Ta = 25°C)
Characteristics
Clock pulse frequency
Reset pulse frequency
Clamp pulse frequency
Clock capacitance
Shift gate capacitance
Reset gate capacitance
Clamp gate capacitance
(Note 11)
Note 11: V_OD = 12 V
Symbol
f_BA
f RS
f CP
C_BA
C_SH
CRS
CCP
Min Typ. Max Unit
0.15 1.0
10 MHz
0.3 2.0
10 MHz
0.3 2.0
10 MHz
¾
400
¾
pF
¾
50
¾
pF
¾
10
¾
pF
¾
10
¾
pF
TCD2950D
Unit
Note
V
V
V
V
V
5
2002-01-31