TC55VCM208ASTN40 Datasheet, PDF (5/12 Pages) Toshiba Semiconductor – 524,288-WORD BY 8-BIT FULL CMOS STATIC RAM

TC55VCM208ASTN40,55
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta = −40° to 85°C, V_DD = 2.3 to 3.6 V)
READ CYCLE
SYMBOL
PARAMETER
t_RC
t_ACC
t_CO1
t_CO2
t_OE
t_COE
t_OEE
t_OD
t_ODO
t_OH
Read Cycle Time
Address Access Time
Chip Enable( CE1 ) Access Time
Chip Enable(CE2) Access Time
Output Enable Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Output Data Hold Time
TC55VCM208ASTN
40
55
MIN MAX MIN MAX
55

70


55

70

55

70

55

70

30

35
5

5

0

0


25

30

25

30
10

10

UNIT
ns
WRITE CYCLE
TC55VCM208ASTN
SYMBOL
PARAMETER
40
55
UNIT
MIN MAX MIN MAX
t_WC
Write Cycle Time
55

70

t_WP
Write Pulse Width
40

50

t_CW
Chip Enable to End of Write
45

55

t_AS
Address Setup Time
t_WR
Write Recovery Time
0

0

0

0

ns
t_ODW
R/W Low to Output High-Z

25

30
t_OEW
R/W High to Output Active
0

0

t_DS
Data Setup Time
25

30

t_DH
Data Hold Time
0

0

Note: t_OD, t_ODO and t_ODW are specified in time when an output becomes high impedance, and are not judged depending on an
output voltage level.
2003-08-11 5/12