SSM6L35FE Datasheet, PDF (5/8 Pages) Toshiba Semiconductor – High-Speed Switching Applications Analog Switch Applications

Q1 (N-ch MOSFET)
V_th – Ta
1.0
Common Source
ID = 1 mA
VDS = 3 V
0.5
0
−50
0
50
100
150
Ambient temperature Ta (°C)
SSM6L35FE
1000
500
300
100
50
30
10
5
3
1
1
⎪Y_fs⎪ – I_D
Common Source
VDS = 3 V
Ta = 25°C
10
100
1000
Drain current I_D (mA)
1000
Common Source
VGS = 0 V
D
100
I_DR
I_DR – V_DS
G
10
S
25°C
Ta = 100°C
1
−25°C
0.1
0.01
0
−0.5
−1
−1.5
Drain–source voltage V_DS (V)
C – V_DS
100
50
10
5
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1
0.5 1
Ciss
Coss
Crss
5 10
50 100
Drain–source voltage V_DS (V)
5000
3000 _toff
1000
tf
500
300
100
ton
50
30 ^tr
10
0.1
t – I_D
Common Source
VDD = 3 V
VGS = 0 to 2.5 V
Ta = 25°C
1
10
100
1000
Drain current I_D (mA)
5
2008-03-21