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SSM6L35FE Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – High-Speed Switching Applications Analog Switch Applications | |||
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SSM6L35FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L35FE
â High-Speed Switching Applications
â Analog Switch Applications
⢠N-ch: 1.2-V drive
P-ch: 1.2-V drive
⢠N-ch, P-ch, 2-in-1
⢠Low ON-resistance Q1 N-ch: Ron = 20 ⦠(max) (@VGS = 1.2 V)
: Ron = 8 ⦠(max) (@VGS = 1.5 V)
: Ron = 4 ⦠(max) (@VGS = 2.5 V)
: Ron = 3 ⦠(max) (@VGS = 4.0 V)
Q2 P-ch: Ron = 44 ⦠(max) (@VGS = -1.2 V)
: Ron = 22 ⦠(max) (@VGS = -1.5 V)
: Ron = 11 ⦠(max) (@VGS = -2.5 V)
: Ron = 8 ⦠(max) (@VGS = -4.0 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
VDSS
20
V
Gateâsource voltage
VGSS
±10
V
Drain current
DC
ID
Pulse
IDP
180
mA
360
Q2 Absolute Maximum Ratings (Ta = 25°C)
1.6±0.05
1.2±0.05
Unit: mm
1
6
2
5
3
4
ES6
1.Source1 4.Source2
2.Gate1 5.Gate2
3.Drain2 6.Drain1
JEDEC
-
JEITA
-
TOSHIBA
2-2N1D
Weight: 3.0 mg (typ.)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Gateâsource voltage
Drain current
DC
Pulse
VDSS
VGSS
ID
IDP
-20
V
±10
V
-100
mA
-200
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristic
Symbol
Rating
Unit
Drain power dissipation
PD(Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 mm, Cu Pad: 0.135 mm2 à 6)
1
2008-03-21
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