GT8G131 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)

Switching Time – R_G
20
Common emitter
VCE = 300 V
10 ^{VGE = 4 V}
IC = 150 A
Tc = 25°C
5
3
toff
tf
tr
ton
1
10
30
50
100
300
Gate resistance RG (9)
GT8G131
V_CE, V_GE – Q_G
500
10
Common emitter
VCE = 300 V
400 ^{RL = 2.0 W}
8
Tc = 25°C
300
6
200
VGE
4
100
2
VCE
0
0
0
20
40
60
80
Gate charge QG (nC)
10
3
1
0.3
0.1
0
Switching Time – I_C
toff
tf
ton
tr
Common emitter
VCE = 300 V
VGE = 4 V
RG = 51 W
Tc = 25°C
50
100
150
200
Collector current IC (A)
Maximum Operating Area
800
600
400
VCM = 350 V
200 _{Tc <= 70°C}
VGE = 4 V
20 W ^<= RG ^<= 200 W
0
0
40
80
120
160
200
Peak collector current ICP (A)
Minimum Gate Drive Area
200
160
Tc = 25°C
120
70°C
80
40
0
0
2
4
6
8
Gate-emitter voltage VGE (V)
5
2003-03-18