GT8G131 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G131
GT8G131
Strobe Flash Applications
Unit: mm
· Supplied in Compact and Thin Package Requires Only a Small
Mounting Area
· 4th generation (trench gate structure) IGBT
· Enhancement-mode
· 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
· Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
400
V
Gate-emitter voltage
DC
V_GES
±6
V
Pulse
V_GES
±8
Collector current
DC
I_C
1 ms
I_CP
8
A
150
Collector power dissipation (Note 1)
P_C
1.1
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
-55~150
°C
Note 1: Drive operation: Mount on glass epoxy board [1 inch² ´ 1.5 t]
JEDEC
―
JEITA
―
TOSHIBA
2-6J1C
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/ms.
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2003-03-18