GT60M322 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

R_{th (t)} – t_w
10²
Tc = 25°C
10¹
Diode stage
10⁰
IGBT stage
10^−1
10^−2
10^−4
10^−3
10^−2
10^−1
10⁰
10¹
10²
Pulse width tw (s)
t_rr, I_rr – I_F
1
100
trr
0.1
Irr
10
0.01
0
Common Collector
di/dt = −200 A/µs
: Tc = 25°C
: Tc = 125°C
1
5
10
15
20
25
30
Forward current IF (A)
GT60M322
I_F – V_F
50
−40
Common
collector
40
25
30
20
10
Tc = 125°C
0
0
1
2
3
4
5
Forward voltage VF (V)
5
2004-07-06