GT60M322 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT60M322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M322
Voltage Resonance Inverter Switching Application
Current Resonance Inverter Switching Application
Unit: mm
• Enhancement mode type
• High speed
: tf = 0.15 µs (typ.) (IC = 60 A)
• Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A)
• FRD included between emitter and collector
• TO-3P(LH) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CES
V_GES
I_C
I_CP
I_F
I_FP
P_C
T_j
T_stg
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R_{th (j-c)}
R_{th (j-c)}
Rating
Unit
950
V
±25
V
60
A
120
25
A
50
76
W
190
150
°C
−55 to 150
°C
Max
Unit
0.66
°C/W
1.38
°C/W
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Equivalent Circuit
Gate
Collector
Emitter
Marking
TOSHIBA
GT60M322
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-06