TPCP8004 Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

I_D – V_DS
10
4 3.5 3.3 3.2
10
3.1
5
8
6
8
3.0
6
2.9
4
2.8
VGS = 2.7 V
2
Common source
Ta = 25°C
Pulse test
0
0
0.2
0.4
0.6
0.8
1
Drain−source voltage V_DS (V)
TPCP8004
20
10
16
4 3.5
5
6
8
12
8
I_D – V_DS
3.3
Common source
Ta = 25°C
Pulse test
3.2
3.1
3.0
2.9
4
2.8
VGS = 2.7 V
0
0
0.4
0.8
1.2
1.6
2
Drain-source voltage V_DS (V)
40
Common source
VDS = 10 V
Pulse test
30
I_D – V_GS
20
Ta = −55°C
10
100
25
0
0
1
2
3
4
5
6
Gate−source voltage V_GS (V)
V_DS – V_GS
0.4
Common source
Ta = 25°C
Pulse test
0.3
0.2
0.1
ID = 8.3 A
4.2
2.1
0
0
2
4
6
8
10
Gate−source voltage V_GS (V)
|Y_fs| – I_D
100
Ta = −55°C
10
25
100
1
0.1
0.1
Common source
VDS = 10 V
Pulse test
1
10
100
Drain current I_D (A)
R_{DS (ON)} – I_D
100
Common source
Ta = 25°C
Pulse test
4.5
10
VGS = 10 V
1
0.1
1
10
100
Drain current I_D (A)
4
2008-12-18