TPCP8004 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)

TPCP8004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCP8004
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: Qg = 26nC (typ.)
• Low drain-source ON-resistance: R_DS(ON) = 7mΩ(typ.)
• High forward transfer admittance: |Y_fs| = 21S (typ.)
• Low leakage current: I_DSS = 10μA (max) (V_DS = 30V)
• Enhancement mode: V_th = 1.3 to 2.5V (V_DS = 10V, I_D = 1mA)
Absolute Maximum Ratings (Ta=25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Drain-gate voltage (R_GS=20 kΩ)
V_DGR
30
V
Gate-source voltage
V_GSS
±20
V
Drain current
DC (Note 1)
I_D
8.3
A
Pulse (Note 1)
I_DP
33.2
Drain power dissipation (t = 5 s)
W
P_D
1.68
(Note 2a)
Drain power dissipation (t = 5 s)
P_D
0.84
W
(Note 2b)
Single-pulse avalanche energy
(Note 3)
E_AS
17.9
mJ
Avalanche current
I_AR
8.3
A
Repetitive avalanche energy
(Note 4)
E_AR
0.021
mJ
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
Note: For Notes 1 to 5, refer to the next page.
0.33 ± 0.05
0.05 M A
8
5
Unit: mm
0.475 1
4
0.65
2.9 ± 0.1
B
0.05 M B
A
S
0.025 S
0.17 ± 0.02
0.8 ± 0.05
0.28
＋0.1
－0.11
1.12
＋0.13
－0.12
1.12
＋0.13
－0.12
0.28
＋0.1
－0.11
1,2,3 ：SOURCE
4 ：GATE
5,6,7,8：DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-3V1K
Weight: 0.017g(typ.)
Circuit Configuration
8765
1234
Marking (Note 5)
8765
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
8004
※
1234
Lot No.
1
2008-12-18