TLP321-2 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V_CC
I_F
I_C
T_opr
TLP321,TLP321-2,TLP321-4
Min. Typ. Max. Unit
―
12
―
16
―
1
-25
―
48
V
20
mA
10
mA
85
°C
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector dark current
Capacitance
(collector to emitter)
Symbol
Condition
V_F
I_F =10 mA
I_R
V_R =5 V
C_T
V = 0, f = 1MHz
V_{(BR) CEO} I_C = 0.5mA
V_{(BR) ECO} I_E = 0.1mA
I_CEO
C_CE
V_CE = 48V
V_CE = 48V, Ta = 85°C
V = 0, f = 1MHz
Min. Typ. Max. Unit
1.0 1.15 1.3
V
—
—
10
µA
—
30
—
pF
80
—
—
V
7
—
—
V
—
10
100
nA
—
2
50
µA
—
10
—
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Collector-emitter
saturation voltage
Symbol
Condition
I_C / I_F
I_F = 5mA, V_CE = 5V
Rank GB
I_C / I_{F (sat)}
I_F = 1mA, V_CE = 0.4V
Rank GB
V_{CE (sat)}
I_C = 2.4mA, I_F = 8mA
I_C = 0.2mA, I_F = 1mA
Rank GB
MIn. Typ. Max. Unit
50
—
600
%
100
—
600
—
60
—
%
30
—
—
—
—
0.4
—
0.2
—
V
—
—
0.4
4
2002-09-25