TLP321-2 Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

TLP321,TLP321-2,TLP321-4
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Forward current
Forward current derating
Pulse forward current
Reverse voltage
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
(1 Circuit)
Collector power dissipation
derating (1 Circuit, Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta ≥ 25°C)
Isolation voltage
(Note 1)
I_F
∆I_F / °C
I_FP
V_R
T_j
V_CEO
V_ECO
I_C
P_C
∆P_C / °C
T_j
T_stg
T_opr
T_sol
R_T
∆P_T / °C
BV_S
Rating
TLP321-1
TLP321-2
TLP321-4
60
50
-0.7 (Ta ≥ 39°C)
-0.5 (Ta ≥ 25°C)
1 (100µs pulse, 100pps)
5
125
80
7
50
150
100
-1.5
-1.0
125
-55~125
-55~100
260 (10s)
250
150
-2.5
-1.5
5000 (AC, 1min., RH ≤ 60%)
Unit
mA
mA / °C
A
V
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins
shorted together.
3
2002-09-25