TLP290-4 Datasheet, PDF (4/13 Pages) Toshiba Semiconductor – TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

Coupled Electrical Characteristics (Ta = 25℃)
TLP290-4
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
Current Transfer Ratio
Saturated CTR
Collector-Emitter Saturation Voltage
Off-State Collector Current
CTR symmetry
I_C / I_F
I_C / I_{F (sat)}
V_{CE (sat)}
I_{C (off)}
I_C (ratio)
I_F = 5 mA, V_CE = 5 V
50
Rank GB 100
I_F = 1 mA, V_CE = 0.4 V
—
Rank GB 30
I_C = 2.4 mA, I_F = 8 mA
—
I_C = 0.2 mA, I_F = 1 mA
—
Rank GB _—
V_F = 0.7 V, V_CE = 48 V
—
I_C (I_F = −5 mA) / I_C (I_F = 5 mA)
Note5
0.33
Note5:
IC(ratio ₎
IC2(IF
IC1(IF
IF2,VCE 5V)
IF1,VCE 5V)
TYP.
—
—
60
—
—
0.2
—
—
—
MAX
400
400
—
—
0.4
—
0.4
10
3
UNIT
%
%
V
μA
—
Isolation Characteristics (Ta = 25℃)
CHARACTERISTIC
Capacitance
(Input to Output)
Isolation Resistance
Isolation Voltage
SYMBOL
TEST CONDITION
C_S
V_S = 0 V, f = 1 MHz
R_S
V_S = 500 V, R.H.≤60%
AC , 1 minute
BV_S
AC , 1 second, in OIL
DC , 1 minute, in OIL
MIN TYP. MAX UNIT
—
0.8
—
pF
1×10¹² 10¹⁴
—
Ω
2500 —
—
Vrms
— 5000 —
— 5000 —
Vdc
Switching Characteristics (Ta = 25℃)
CHARACTERISTIC
Rise Time
Fall Time
Turn-On Time
Turn-Off Time
Turn-On Time
Storage Time
Turn-Off Time
(Fig.1) Switchin Time Test Circuit
SYMBOL
t_r
t_f
t_on
t_off
t_ON
t_s
t_OFF
TEST CONDITION
MIN
V_CC = 10 V, I_C = 2 mA
R_L = 100Ω
R_L = 1.9 kΩ
V_CC = 5 V, I_F = 16 mA
—
—
—
—
—
(Fig.1) _—
—
TYP.
2
3
3
3
2
25
40
MAX UNIT
—
—
μs
—
—
—
—
μs
—
HOC-1457
4
2011-09-08