TLP290-4 Datasheet, PDF (3/13 Pages) Toshiba Semiconductor – TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP290-4
Absolute Maximum Ratings (Ta = 25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Forward Current
I_F(RMS)
±50
mA
Forward Current Derating
Pulse Forward Current (Note2)
∆I_F /°C
I_FP
−0.67 (Ta≥50°C)
±1
mA /°C
A
Junction Temperature
T_j
125
°C
Collector-Emitter Voltage
V_CEO
80
V
Emitter-Collector Voltage
V_ECO
7
V
Collector Current
I_C
Collector Power Dissipation
(1 Circuit)
P_C
50
mA
100
mW
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
∆P_C /°C
−1.0
mW /°C
Junction Temperature
T_j
125
°C
Operating Temperature Range
T_opr
−55 to 110
°C
Storage Temperature Range
T_stg
−55 to 125
°C
Lead Soldering Temperature
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C)
(1 Circuit)
T_sol
P_T
∆P_T /°C
260 (10s)
170
−1.7
°C
mW
mW /°C
Isolation Voltage
(Note3)
BV_S
2500
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note2: Pulse width 100μs, frequency 100Hz
Note3: AC, 1 minute, R.H.≤60%, Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics (Ta = 25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Forward Voltage
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Dark Current
Capacitance
(Collector to Emitter)
(Note5)
V_F
C_T
V_{(BR) CEO}
V_{(BR) ECO}
I_CEO
C_CE
I_F = 10 mA
V = 0, f = 1 MHz
I_C = 0.5 mA
I_E = 0.1 mA
V_CE = 48 V,
V_CE = 48 V, Ta = 85°C
V = 0, f = 1 MHz
MIN TYP. MAX UNIT
1.1 1.20 1.4
V
—
30
—
pF
80
—
—
V
7
—
—
V
—
0.01
0.1
μA
—
2
50
μA
—
10
—
pF
HOC-1457
3
2011-09-08